История:
IXGH40N120A2
IXBH12N300
IXBH12N300
Артикул:
IXBH12N300
Описание:
IXBH12N300
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IXBH12N300: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IXBH12N300: Биполярный транзистор с изолированным затвором

