IXBH20N300
IXBH20N300
Артикул:
Описание:
IXBH20N300
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXBH20N300: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXBH20N300: Биполярный транзистор с изолированным затвором