История:
IXGH40N120A2
IXBH5N160G
IXBH5N160G
Артикул:
IXBH5N160G
Описание:
IXBH5N160G
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1.6 kV
Collector-Emitter Saturation Voltage
4.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5.7 A
Power Dispation
68 W
Описание
Insulated-gate bipolar transistor-IXBH5N160G: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1.6 kV
Collector-Emitter Saturation Voltage
4.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5.7 A
Power Dispation
68 W
Описание
Insulated-gate bipolar transistor-IXBH5N160G: Биполярный транзистор с изолированным затвором

