IXBN75N170A
IXBN75N170A
Артикул:
IXBN75N170A
Описание:
IXBN75N170A
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
4.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXBN75N170A: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
4.95 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXBN75N170A: Биполярный транзистор с изолированным затвором