История:
FS200R12PT4PBOSA1
IXBT12N300HV
IXBT12N300HV
Артикул:
IXBT12N300HV
Описание:
IXBT12N300HV
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IXBT12N300HV: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
30 A
Power Dispation
160 W
Описание
Insulated-gate bipolar transistor-IXBT12N300HV: Биполярный транзистор с изолированным затвором

