История:
FS200R12PT4PBOSA1
IXBT20N360HV
IXBT20N360HV
Артикул:
IXBT20N360HV
Описание:
IXBT20N360HV
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3600 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
70 A
Power Dispation
430 W
Описание
Insulated-gate bipolar transistor-IXBT20N360HV: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3600 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
70 A
Power Dispation
430 W
Описание
Insulated-gate bipolar transistor-IXBT20N360HV: Биполярный транзистор с изолированным затвором

