История:
FS200R12PT4PBOSA1
IXBT2N250
IXBT2N250
Артикул:
IXBT2N250
Описание:
IXBT2N250
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2.5 kV
Collector-Emitter Saturation Voltage
3.15 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5 A
Power Dispation
32 W
Описание
Insulated-gate bipolar transistor-IXBT2N250: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2.5 kV
Collector-Emitter Saturation Voltage
3.15 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5 A
Power Dispation
32 W
Описание
Insulated-gate bipolar transistor-IXBT2N250: Биполярный транзистор с изолированным затвором

