История:
FS200R12PT4PBOSA1
IXBT42N300HV
IXBT42N300HV
Артикул:
IXBT42N300HV
Описание:
IXBT42N300HV
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
104 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXBT42N300HV: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
104 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXBT42N300HV: Биполярный транзистор с изолированным затвором

