История:
VCAS080526C580DP
P0300EALAP
96MPI5K-3.4-6M11T
IXBT42N300HV
IXBT42N300HV
Артикул:
Описание:
IXBT42N300HV
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
104 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXBT42N300HV: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3 kV
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
104 A
Power Dispation
500 W
Описание
Insulated-gate bipolar transistor-IXBT42N300HV: Биполярный транзистор с изолированным затвором

