История:
FS200R12PT4PBOSA1
IXBT6N170
IXBT6N170
Артикул:
IXBT6N170
Описание:
IXBT6N170
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.84 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
12 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IXBT6N170: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.84 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
12 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IXBT6N170: Биполярный транзистор с изолированным затвором
