История:
TLC393CPSR
IXBX55N300
IXBX55N300
Артикул:
IXBX55N300
Описание:
IXBX55N300
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3000 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
130 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXBX55N300: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
3000 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
25 V
Continuous Collector Current at 25 C
130 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXBX55N300: Биполярный транзистор с изолированным затвором

