IXDH20N120D1
IXDH20N120D1
Артикул:
IXDH20N120D1
Описание:
IXDH20N120D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
38 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IXDH20N120D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
38 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IXDH20N120D1: Биполярный транзистор с изолированным затвором