IXDP20N60BD1
IXDP20N60BD1
Артикул:
IXDP20N60BD1
Описание:
IXDP20N60BD1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
140 W
Описание
Insulated-gate bipolar transistor-IXDP20N60BD1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
140 W
Описание
Insulated-gate bipolar transistor-IXDP20N60BD1: Биполярный транзистор с изолированным затвором