История:
FS200R12PT4PBOSA1
IXGA12N120A3
IXGA12N120A3
Артикул:
IXGA12N120A3
Описание:
IXGA12N120A3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
22 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IXGA12N120A3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
22 A
Power Dispation
100 W
Описание
Insulated-gate bipolar transistor-IXGA12N120A3: Биполярный транзистор с изолированным затвором

