IXGA30N120B3
IXGA30N120B3
Артикул:
IXGA30N120B3
Описание:
IXGA30N120B3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.96 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXGA30N120B3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.96 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXGA30N120B3: Биполярный транзистор с изолированным затвором