История:
FS200R12PT4PBOSA1
IXGH16N170
IXGH16N170
Артикул:
IXGH16N170
Описание:
IXGH16N170
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IXGH16N170: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IXGH16N170: Биполярный транзистор с изолированным затвором

