IXGH16N170A
IXGH16N170A
Артикул:
IXGH16N170A
Описание:
IXGH16N170A
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
4.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IXGH16N170A: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
4.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
16 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IXGH16N170A: Биполярный транзистор с изолированным затвором