IXGH20N120A3
IXGH20N120A3
Артикул:
IXGH20N120A3
Описание:
IXGH20N120A3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
180 W
Описание
Insulated-gate bipolar transistor-IXGH20N120A3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
40 A
Power Dispation
180 W
Описание
Insulated-gate bipolar transistor-IXGH20N120A3: Биполярный транзистор с изолированным затвором