История:
PIC18F25K83-I/SO
IXGH24N120C3
IXGH24N120C3
Артикул:
IXGH24N120C3
Описание:
IXGH24N120C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH24N120C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH24N120C3: Биполярный транзистор с изолированным затвором

