IXGH28N60B3D1
IXGH28N60B3D1
Артикул:
IXGH28N60B3D1
Описание:
IXGH28N60B3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Continuous Collector Current at 25 C
66 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IXGH28N60B3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Continuous Collector Current at 25 C
66 A
Power Dispation
190 W
Описание
Insulated-gate bipolar transistor-IXGH28N60B3D1: Биполярный транзистор с изолированным затвором