IXGH30N120B3D1
IXGH30N120B3D1
Артикул:
IXGH30N120B3D1
Описание:
IXGH30N120B3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.96 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXGH30N120B3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.96 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
50 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXGH30N120B3D1: Биполярный транзистор с изолированным затвором