IXGH36N60B3C1
IXGH36N60B3C1
Артикул:
IXGH36N60B3C1
Описание:
IXGH36N60B3C1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH36N60B3C1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH36N60B3C1: Биполярный транзистор с изолированным затвором