IXGH36N60B3D1
IXGH36N60B3D1
Артикул:
IXGH36N60B3D1
Описание:
IXGH36N60B3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
200 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH36N60B3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
200 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXGH36N60B3D1: Биполярный транзистор с изолированным затвором