История:
PIC18F25K83-I/SO
IXGH40N120A2
IXGH40N120A2
Артикул:
IXGH40N120A2
Описание:
IXGH40N120A2
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-IXGH40N120A2: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-IXGH40N120A2: Биполярный транзистор с изолированным затвором

