IXGH40N120B2D1
IXGH40N120B2D1
Артикул:
IXGH40N120B2D1
Описание:
IXGH40N120B2D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
380 W
Описание
Insulated-gate bipolar transistor-IXGH40N120B2D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
2.9 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
380 W
Описание
Insulated-gate bipolar transistor-IXGH40N120B2D1: Биполярный транзистор с изолированным затвором