IXGH60N30C3
IXGH60N30C3
Артикул:
IXGH60N30C3
Описание:
IXGH60N30C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
300 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXGH60N30C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
300 V
Collector-Emitter Saturation Voltage
1.55 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
300 W
Описание
Insulated-gate bipolar transistor-IXGH60N30C3: Биполярный транзистор с изолированным затвором