IXGH6N170
IXGH6N170
Артикул:
IXGH6N170
Описание:
IXGH6N170
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
12 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IXGH6N170: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
12 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IXGH6N170: Биполярный транзистор с изолированным затвором