История:
PIC18F27J53-I/SO
PIC18F26Q84-I/SP
IXGH6N170A
IXGH6N170A
Артикул:
IXGH6N170A
Описание:
IXGH6N170A
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
5.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
6 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IXGH6N170A: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
5.4 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
6 A
Power Dispation
75 W
Описание
Insulated-gate bipolar transistor-IXGH6N170A: Биполярный транзистор с изолированным затвором

