История:
PIC32MX130F128H-V/PT
2EDGKCM-5.0-02P
IXGK120N120A3
IXGK120N120A3
Артикул:
Описание:
IXGK120N120A3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
240 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXGK120N120A3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
1.85 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
240 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXGK120N120A3: Биполярный транзистор с изолированным затвором

