IXGK400N30A3
IXGK400N30A3
Артикул:
IXGK400N30A3
Описание:
IXGK400N30A3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
300 V
Collector-Emitter Saturation Voltage
1.15 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
400 A
Power Dispation
1 kW
Описание
Insulated-gate bipolar transistor-IXGK400N30A3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
300 V
Collector-Emitter Saturation Voltage
1.15 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
400 A
Power Dispation
1 kW
Описание
Insulated-gate bipolar transistor-IXGK400N30A3: Биполярный транзистор с изолированным затвором