IXGK72N60A3H1
IXGK72N60A3H1
Артикул:
IXGK72N60A3H1
Описание:
IXGK72N60A3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
540 W
Описание
Insulated-gate bipolar transistor-IXGK72N60A3H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
75 A
Power Dispation
540 W
Описание
Insulated-gate bipolar transistor-IXGK72N60A3H1: Биполярный транзистор с изолированным затвором