IXGN100N170
IXGN100N170
Артикул:
IXGN100N170
Описание:
IXGN100N170
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
735 W
Описание
Insulated-gate bipolar transistor-IXGN100N170: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
735 W
Описание
Insulated-gate bipolar transistor-IXGN100N170: Биполярный транзистор с изолированным затвором