IXGN200N170
IXGN200N170
Артикул:
IXGN200N170
Описание:
IXGN200N170
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
280 A
Power Dispation
1250 W
Описание
Insulated-gate bipolar transistor-IXGN200N170: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
280 A
Power Dispation
1250 W
Описание
Insulated-gate bipolar transistor-IXGN200N170: Биполярный транзистор с изолированным затвором