IXGN200N60B3
IXGN200N60B3
Артикул:
IXGN200N60B3
Описание:
IXGN200N60B3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
300 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXGN200N60B3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
300 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXGN200N60B3: Биполярный транзистор с изолированным затвором