IXGN400N60A3
IXGN400N60A3
Артикул:
IXGN400N60A3
Описание:
IXGN400N60A3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
400 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXGN400N60A3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.25 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
400 A
Power Dispation
830 W
Описание
Insulated-gate bipolar transistor-IXGN400N60A3: Биполярный транзистор с изолированным затвором