IXGN72N60A3
IXGN72N60A3
Артикул:
IXGN72N60A3
Описание:
IXGN72N60A3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-IXGN72N60A3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.35 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-IXGN72N60A3: Биполярный транзистор с изолированным затвором