IXGN72N60C3H1
IXGN72N60C3H1
Артикул:
IXGN72N60C3H1
Описание:
IXGN72N60C3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-IXGN72N60C3H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.1 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
78 A
Power Dispation
360 W
Описание
Insulated-gate bipolar transistor-IXGN72N60C3H1: Биполярный транзистор с изолированным затвором