IXGP30N60C3D4
IXGP30N60C3D4
Артикул:
IXGP30N60C3D4
Описание:
IXGP30N60C3D4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
220 W
Описание
Insulated-gate bipolar transistor-IXGP30N60C3D4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
220 W
Описание
Insulated-gate bipolar transistor-IXGP30N60C3D4: Биполярный транзистор с изолированным затвором