IXGR24N120C3D1
IXGR24N120C3D1
Артикул:
IXGR24N120C3D1
Описание:
IXGR24N120C3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IXGR24N120C3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1200 V
Collector-Emitter Saturation Voltage
3.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
48 A
Power Dispation
200 W
Описание
Insulated-gate bipolar transistor-IXGR24N120C3D1: Биполярный транзистор с изолированным затвором