IXGR48N60B3D1
IXGR48N60B3D1
Артикул:
IXGR48N60B3D1
Описание:
IXGR48N60B3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.77 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IXGR48N60B3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.77 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
150 W
Описание
Insulated-gate bipolar transistor-IXGR48N60B3D1: Биполярный транзистор с изолированным затвором