IXGT10N170
IXGT10N170
Артикул:
IXGT10N170
Описание:
IXGT10N170
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
110 W
Описание
Insulated-gate bipolar transistor-IXGT10N170: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
2.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
20 A
Power Dispation
110 W
Описание
Insulated-gate bipolar transistor-IXGT10N170: Биполярный транзистор с изолированным затвором