IXGT10N170A
IXGT10N170A
Артикул:
IXGT10N170A
Описание:
IXGT10N170A
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
4.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
140 W
Описание
Insulated-gate bipolar transistor-IXGT10N170A: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
1700 V
Collector-Emitter Saturation Voltage
4.5 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
10 A
Power Dispation
140 W
Описание
Insulated-gate bipolar transistor-IXGT10N170A: Биполярный транзистор с изолированным затвором