История:
96MPI5K-2.7-6M11T
96MPI7-3.4-8M11T1
IXGT2N250
IXGT2N250
Артикул:
Описание:
IXGT2N250
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2500 V
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5.5 A
Power Dispation
32 W
Описание
Insulated-gate bipolar transistor-IXGT2N250: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2500 V
Collector-Emitter Saturation Voltage
2.6 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
5.5 A
Power Dispation
32 W
Описание
Insulated-gate bipolar transistor-IXGT2N250: Биполярный транзистор с изолированным затвором
