IXLF19N250A
IXLF19N250A
Артикул:
IXLF19N250A
Описание:
IXLF19N250A
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2.5 kV
Collector-Emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXLF19N250A: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
2.5 kV
Collector-Emitter Saturation Voltage
3.2 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
32 A
Power Dispation
250 W
Описание
Insulated-gate bipolar transistor-IXLF19N250A: Биполярный транзистор с изолированным затвором