IXXH110N65C4
IXXH110N65C4
Артикул:
IXXH110N65C4
Описание:
IXXH110N65C4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.98 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
234 A
Power Dispation
880 W
Описание
Insulated-gate bipolar transistor-IXXH110N65C4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.98 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
234 A
Power Dispation
880 W
Описание
Insulated-gate bipolar transistor-IXXH110N65C4: Биполярный транзистор с изолированным затвором