IXXH30N60B3D1
IXXH30N60B3D1
Артикул:
Описание:
IXXH30N60B3D1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IXXH30N60B3D1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
60 A
Power Dispation
270 W
Описание
Insulated-gate bipolar transistor-IXXH30N60B3D1: Биполярный транзистор с изолированным затвором