IXXH30N65B4
IXXH30N65B4
Артикул:
IXXH30N65B4
Описание:
IXXH30N65B4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
65 A
Power Dispation
230 W
Описание
Insulated-gate bipolar transistor-IXXH30N65B4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.66 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
65 A
Power Dispation
230 W
Описание
Insulated-gate bipolar transistor-IXXH30N65B4: Биполярный транзистор с изолированным затвором