IXXH50N60C3
IXXH50N60C3
Артикул:
Описание:
IXXH50N60C3
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXXH50N60C3: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
2.3 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
100 A
Power Dispation
600 W
Описание
Insulated-gate bipolar transistor-IXXH50N60C3: Биполярный транзистор с изолированным затвором