История:
PIC32MX150F256L-V/PT
IXXH60N65B4
IXXH60N65B4
Артикул:
Описание:
IXXH60N65B4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
116 A
Power Dispation
455 W
Описание
Insulated-gate bipolar transistor-IXXH60N65B4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.7 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
116 A
Power Dispation
455 W
Описание
Insulated-gate bipolar transistor-IXXH60N65B4: Биполярный транзистор с изолированным затвором

