История:
LS1022AXE7EKB
DG136HT-12.7-02P
ATSAMA5D36A-CU
IXXH80N65B4
IXXH80N65B4
Артикул:
Описание:
IXXH80N65B4
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXXH80N65B4: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
650 V
Collector-Emitter Saturation Voltage
1.65 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
160 A
Power Dispation
625 W
Описание
Insulated-gate bipolar transistor-IXXH80N65B4: Биполярный транзистор с изолированным затвором

