IXXK100N60B3H1
IXXK100N60B3H1
Артикул:
Описание:
IXXK100N60B3H1
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
190 A
Power Dispation
695 W
Описание
Insulated-gate bipolar transistor-IXXK100N60B3H1: Биполярный транзистор с изолированным затвором
Характеристики
Manufacturer
IXYS
Collector-Emitter Voltage
600 V
Collector-Emitter Saturation Voltage
1.8 V
Maximum Gate Emitter Voltage
20 V
Continuous Collector Current at 25 C
190 A
Power Dispation
695 W
Описание
Insulated-gate bipolar transistor-IXXK100N60B3H1: Биполярный транзистор с изолированным затвором